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Deep p-Ring Trench Termination: An Innovative and Cost-Effective Way to Reduce Silicon Area

Antoniou, M.; Lophitis, N.; Udrea, F.; Rahimo, M.; Vemulapati, U.; Corvasce, C.; Badstuebner, U.

Deep p-Ring Trench Termination: An Innovative and Cost-Effective Way to Reduce Silicon Area Thumbnail


Authors

M. Antoniou

N. Lophitis

F. Udrea

M. Rahimo

U. Vemulapati

C. Corvasce

U. Badstuebner



Abstract

© 1980-2012 IEEE. A new type of high-voltage termination, namely the 'deep p-ring trench' termination design for high-voltage, high-power devices, is presented and extensively simulated. Termination of such devices consumes a large proportion of the chip size; the proposed design concept not only reduces the termination silicon area required but also removes the need for an additional mask as is the case of the traditional p+ ring-type termination. Furthermore, the presence of the p-ring under and around the bottom of the trench structure reduces the electric field peaks at the corners of the oxide, which results in reduced hot carrier injection and improved device reliability.

Citation

Antoniou, M., Lophitis, N., Udrea, F., Rahimo, M., Vemulapati, U., Corvasce, C., & Badstuebner, U. (2019). Deep p-Ring Trench Termination: An Innovative and Cost-Effective Way to Reduce Silicon Area. IEEE Electron Device Letters, 40(2), 177-180. https://doi.org/10.1109/LED.2018.2890702

Journal Article Type Article
Acceptance Date Dec 24, 2018
Online Publication Date Jan 3, 2019
Publication Date Feb 1, 2019
Deposit Date Apr 24, 2020
Publicly Available Date Apr 24, 2020
Journal IEEE Electron Device Letters
Print ISSN 0741-3106
Electronic ISSN 1558-0563
Publisher Institute of Electrical and Electronics Engineers
Peer Reviewed Peer Reviewed
Volume 40
Issue 2
Pages 177-180
DOI https://doi.org/10.1109/LED.2018.2890702
Keywords Electrical and Electronic Engineering; Electronic, Optical and Magnetic Materials
Public URL https://nottingham-repository.worktribe.com/output/3706507
Publisher URL https://ieeexplore.ieee.org/document/8600343
Additional Information © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

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